MCR16 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR16/D Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half- wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half- wave, silicon gate- controlled devices are needed. - Blocking Voltage to 800 Volts - On-State Current Rating of 16 Amperes RMS - High Surge Current Capability - 160 Amperes - Industry Standard TO- 220AB Package for Ease of Design - Glass Passivated Junctions for Reliability and Uniformity - Motorola preferred devices MCR16 SERIES- SCRs 16 AMPERES RMS 400 thru 800 VOLTS CASE 221A- 06 (TO-220AB) Style 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = - 40 to 125°C) Symbol VDRM VRRM MCR16D MCR16M MCR16N IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 400 600 800 16 160 106 5.0 0.5 2.0 - 40 to +125 - 40 to +150 A A A2sec Watts Watts A °C °C Value Unit Volts On-State RMS Current (All Conduction Angles) Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds RθJC RθJA TL 1.5 62.5 260 °C/W °C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola remended choices for...