MFE2000 Datasheet | Motorola Semiconductor

MFE2000 MFE2001 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol v Ds v Dg Vgs id pd TJ. Tst g Value 25 25 -25 30 300 2.0 -65 to +175 Unit Vdc Vdc Vdc m Adc m W m W/°C DC ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic. OFF CHARACTERISTICS Gate-Source Breakdown Voltage d G = - 1.0 MAdc, V D s = 0) Gate Reverse Current (VGS = -20 Vdc, VDS = 0) (VGS = -20 Vdc, V D S = 0, TA = 150°C) Gate Source Cutoff Voltage (Iq = 0.5 m Adc, V D S = 15 Vdc) ON CHARACTERISTICS MFE2000 MFE2001 Zero-Gate-Voltage Drain Current (V DS = 15 Vdc, V GS = 0) MFE2000 MFE2001 SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (Vd S = 15 Vdc, Vqs = 0, f = 1.0 k Hz) MFE2000 MFE2001 Output Admittance (VD s = 15 Vdc, V GS = 0, f = 1.0 k Hz) MFE2000 MFE2001 Input Capacitance (Vqs = 15 Vdc, Vqs = 0, f = 1.0...