MFE9200 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MFE9200 |
|---|---|
| Datasheet | MFE9200-Motorola.pdf |
| File Size | 81.83 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | N-CHANNEL TMOS SWITCHING FET |
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MFE9200 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (1) Pulsed (2) Total Device Dissipation (a Jq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs Vgs id 'dm pd TJ. Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (vG s = Do, i = 10 mA) Gate Reverse Current (VGS = 15 Vdc.
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MFE910 | N-Channel TMOS FET |
| MFE930 | N-Channel TMOS FET |
| MFE960 | N-Channel TMOS FET |
| MFE990 | N-Channel TMOS FET |
| MFE120 | DUAL-GATE MOSFET VHF AMPLIFIER |
| MFE121 | DUAL-GATE MOSFET VHF AMPLIFIER |
| MFE122 | DUAL-GATE MOSFET VHF AMPLIFIER |
| MFE130 | Silicon N-Channel Dual Gate FET |
| MFE131 | Silicon N-Channel Dual Gate FET |
| MFE132 | Silicon N-Channel Dual Gate FET |
