MFE9200
MFE9200 is N-CHANNEL TMOS SWITCHING FET manufactured by Motorola Semiconductor.
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous (1) Pulsed (2)
Total Device Dissipation (a Jq = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol vDs Vgs id
'dm pd
TJ. Tstg
Value 200 ±20
400 800
1.8 14.4
- 55 to + 1 50
Unit Vdc Vdc mAdc
Watts mW/°C
°C
CASE 22-03, STYLE 12
TO-18 (TO-206AA)
TMOS
SWITCHING
- N-CHANNEL ENHANCEMENT
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (vG s = Do, i = 10 mA)
Gate Reverse Current
(VGS
=
15 Vdc. V...
