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MFR9180 - RF Power Field Effect Transistors

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Features

  • F9180S 7 Zo = 5 Ω f = 895 MHz Zsource Zload f = 895 MHz f = 865 MHz f = 865 MHz VDD = 26 V, IDQ = 2 × 700 mA, Pout = 170 W PEP f MHz 865 880 895 Zsource Ω 2.95 + j0.00 2.48 + j0.67 2.44 + j1.18 Zload Ω 3.83 + j1.02 3.55 + j1.38 3.34+ j1.51 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to.

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Datasheet Details

Part number MFR9180
Manufacturer Motorola
File Size 342.87 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MFR9180 Datasheet
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9180/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 700 mA IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 40 Watts Power Gain — 17 dB Efficiency — 26% Adjacent Channel Power – 750 kHz: –45.0 dBc @ 30 kHz BW 1.98 MHz: –60.
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