MGP7N60E Datasheet | Motorola Semiconductor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP7N60E/D Insulated Gate Bipolar Transistor N- Channel Enhancement- Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage- blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E- series introduces an energy efficient, ESD protected, and short circuit rugged device. - - - - - - Industry Standard TO- 220...