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MGR2018CT - Power Manager Gallium Arsenide Power Rectifier

Key Features

  • Planar Epitaxial Construction.
  • Nitride Passivation for Stable Blocking Characteristics.
  • Monolithic Dual Die Construction.
  • May be Paralleled for High Current Output (10A per leg or 20A per package).
  • Single Die Available (MGR1018).
  • Epoxy Meets UL94, VO @ 1/8″.
  • Hyperfast and Soft Reverse Recovery Over Specified Temperature Range (15 ns) Mechanical Characteristics.
  • Case: Epoxy, Molded.
  • Weight: 1.9 grams (approximately.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MGR2025CT Power Manager Gallium Arsenide Power Rectifier
MGR1018 Power Manager Gallium Arsenide Power Rectifier
MGRB1018 Power Manager Gallium Arsenide Power Rectifier
MGRB2018 Power Manager Gallium Arsenide Power Rectifier
MGRB2018CT Power Manager Gallium Arsenide Power Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGR2018CT/D Advance Information Power Manager™ . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking Characteristics • Monolithic Dual Die Construction – May be Paralleled for High Current Output (10A per leg or 20A per package) • Single Die Available (MGR1018) • Epoxy Meets UL94, VO @ 1/8″ • Hyperfast and Soft Reverse Recovery Over Specified Temperature Range (15 ns) Mechanical Characteristics • Case: Epoxy, Molded • Weight: 1.