MGSF1P02LT1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1P02LT1/D Motorola Preferred Device Low r DS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the Green Line™ Portfolio of devices with energy- conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc- dc converters and power management in portable and battery- powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. - Low r DS(on) Provides Higher Efficiency and Extends Battery Life - Miniature SOT- 23 Surface Mount Package Saves Board Space P- CHANNEL ENHANCEMENT- MODE TMOS MOSFET ™ 3 DRAIN 1 2 1 GATE 2 SOURCE CASE 318- 08, Style 21 SOT- 23 (TO- 236AB) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain- to- Source Voltage Gate- to- Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C Drain Current - Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance - Junction- to- Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RθJA TL Value 20 ± 20 750 2000 225 - 55 to 150 625 260 Unit Vdc Vdc m A m W °C °C/W °C ORDERING INFORMATION Device MGSF1P02LT1 MGSF1P02LT3 Reel Size 7″ 13″ Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000 Green Line is a trademark of Motorola, Inc. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist pany. Preferred devices are Motorola remended choices for future use and best overall value. REV 1 Motorola Transistors, FETs and Diodes Device Data © Motorola, Small- Signal Inc. 1996 ELECTRICAL CHARACTERISTICS...