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MGSF3454XT1 - N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

Features

  • package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 500 milliwatts. There are other alternatives to achieving higher power dissipation from the TSOP.
  • 6 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. Motorola Small.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF3454XT1/D Preliminary Information MGSF3454XT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine ™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery– powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
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