| Part number | MGY20N120D |
|---|---|
| Datasheet | MGY20N120D_MotorolaInc.pdf |
| File Size | 254.77 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY20N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | ON |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MGY25N120 | Insulated Gate Bipolar Transistor |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGY30N60D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGY40N60 | Insulated Gate Bipolar Transistor |
| MGY40N60D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
