MGY20N120D datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MGY20N120D |
|---|---|
| Datasheet | MGY20N120D_MotorolaInc.pdf |
| File Size | 254.77 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY20N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high...
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | ON |
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