| Part number | MGY25N120 |
|---|---|
| Datasheet | MGY25N120_MotorolaInc.pdf |
| File Size | 228.61 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | Insulated Gate Bipolar Transistor |
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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MGY25N120 | Insulated Gate Bipolar Transistor | ON |
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MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | ON |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGY30N60D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGY40N60 | Insulated Gate Bipolar Transistor |
| MGY40N60D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
