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MGY25N120D - Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Features

  • 3 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H Y Q S DIM A B C D E F G H J K L N P Q R U W STYLE 5: PIN 1. GATE 2.

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Datasheet Details

Part number MGY25N120D
Manufacturer Motorola
File Size 256.30 KB
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Datasheet download datasheet MGY25N120D Datasheet
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.
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