| Part number | MGY30N60D |
|---|---|
| Datasheet | MGY30N60D_MotorolaInc.pdf |
| File Size | 254.58 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY30N60D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
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