The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHPA21010/D
The RF Line
UMTS Band RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems. • Typical W–CDMA Performance for VDD = 28 Volts, Vbias = 8 Volts, IDQ = 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels at ± 5 MHz, ACPR Measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF, 3GPP Test Model 1, 64 DTCH. • Adjacent Channel Power: –50 dBc @ 30 dBm, 5 MHz Channel Spacing • Power Gain: 23.
MHPA21010 Datasheet
