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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHPA21010/D
The RF Line
UMTS Band RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems. • Typical W–CDMA Performance for VDD = 28 Volts, Vbias = 8 Volts, IDQ = 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels at ± 5 MHz, ACPR Measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF, 3GPP Test Model 1, 64 DTCH. • Adjacent Channel Power: –50 dBc @ 30 dBm, 5 MHz Channel Spacing • Power Gain: 23.
MHPA21010 Datasheet
