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MHW1134 - Low Distortion Wideband Amplifiers

Key Features

  • all gold metallization system.
  • Guaranteed Broadband Power Gain @ f = 5.0.
  • 200 MHz.
  • Guaranteed Broadband Noise Figure @ f = 5.0.
  • 175 MHz.
  • Superior Gain, Return Loss and DC Current Stability with Temperature.
  • All Gold Metallization.
  • All Ion.
  • Implanted Arsenic Emitter Transistor Chips with 6.0 GHz fT’s.
  • Circuit Design Optimized for Good RF Stability Under High VSWR Load Conditions.
  • Transformers Designed to Insure.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

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MHW1184 Low Distortion Wideband Amplifiers
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW1134/D Low Distortion Wideband Amplifiers . . . designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and high–split 2–way cable TV systems. Features all gold metallization system. • Guaranteed Broadband Power Gain @ f = 5.0– 200 MHz • Guaranteed Broadband Noise Figure @ f = 5.0– 175 MHz • Superior Gain, Return Loss and DC Current Stability with Temperature • All Gold Metallization • All Ion–Implanted Arsenic Emitter Transistor Chips with 6.