MHW7222
Key Features
- ion–implanted, arsenic emitter transistors and an all gold metallization system
- Specified for 110/128–Channel Performance
- Broadband Power Gain — @ f = 40 – 860 MHz Gp = 22 dB Typ @ 750 and 860 MHz
- Broadband Noise Figure NF = 5.5 dB Typ — MHW7222 NF = 6.4 dB Typ — MHW8222
- Superior Gain, Return Loss and DC Current Stability with Temperature
- All Gold Metallization
