MHW7222A
Key Features
- ion–implanted, arsenic emitter transistors, an all gold metallization system and offers improved ruggedness and distortion performance
- Specified for 110–Channel Performance
- Broadband Power Gain — @ f = 40 – 750 MHz Gp = 22.3 dB Typ @ 750 MHz
- Broadband Noise Figure NF = 5.5 dB Typ
- All Gold Metallization
