MHW8182 Datasheet | Motorola Semiconductor

feature ion- implanted, arsenic emitter transistors and an all gold metallization system. - Specified for 110/128/152- Channel Performance - Broadband Power Gain - @ f = 40 - 1000 MHz Gp = 18.2 d B Min @ 750, 860 & 1000 MHz - Broadband Noise Figure NF = 5.5 d B Typ - MHW7182 NF = 6.0 d B Typ - MHW8182 NF = 6.5 d B Typ - MHW9182 - Superior Gain, Return Loss and DC Current Stability with Temperature - All Gold Metallization CASE 714- 06, STYLE 1 18 d B GAIN 750/860/1000 MHz 110/128/152 CHANNEL CATV AMPLIFIERS MAXIMUM RATINGS Rating DC Supply Voltage RF Input Voltage (Single Tone) Operating Case Temperature Range Storage Temperature Range Symbol VCC Vin TC Tstg Value + 28 + 70 - 20 to +100 - 40 to +100 Unit Vdc d Bm V °C °C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc; TC = +30°C, 75 ohm system, unless otherwise noted) Characteristic Frequency Range MHW7182 MHW8182 MHW9182 50 MHz 750 MHz 860 MHz 1000 MHz All MHW7182 MHW8182 MHW9182 MHW7182, MHW8182, MHW9182 MHW7182, MHW8182 MHW9182 Input/Output Return Loss @ f = 40 MHz Derate Return Loss @ f > 40 MHz (Ref = 20 d B @ 40 MHz) posite Second Order (Vout = + 40 d Bm V/ch; 110 Channels) (Vout = + 38 d Bm V/ch; 128 Channels) (Vout = + 38 d Bm V/ch; 152 Channels) MHW7182, MHW8182, MHW9182 MHW7182 MHW8182 MHW9182 MHW7182 MHW8182 MHW9182 IRL/ORL RLD Symbol BW Min 40 40 40 17.6 18.2 18.2 18.2 0 - - 20 - - - - - - Typ - - - 18.2 18.9 19.0 19.2 1.0 0.4 0.4 24 - - - - 67 - 67 - 67 Max 750 860 1000 18.8 20.5 20.5 20.7 2.5 0.6 0.8 - 0.007 0.008 0.009 - 62 - 60 - 59 (continued) Unit MHz Power Gain Gp d B Slope Gain Flatness (Peak To Valley) S Gf - - d B d B/MHz d B CSO110 CSO128 CSO152 REV 6 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 MHW7182 MHW8182 MHW9182...