MHW913 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW913/D UHF Silicon FET Power Amplifier Designed specifically for the Pan European digital 8.0 watt, GSM mobile radio. The MHW913 is capable of wide power range control, operates from a 12.5 volt supply and requires less than 100 m W of RF input power. - Specified 12.5 V Characteristics RF Input Power ≤ 100 m W (20 d Bm) RF Output Power = 14 W Minimum Gain = 21.5 d B Minimum Efficiency = 35% - 50 Ω Input/Output Impedance - Guaranteed Stability and Ruggedness - Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture - Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. 14 WATT 880 - 915 MHz RF POWER AMPLIFIER CASE 301AB- 02, STYLE 1 MAXIMUM RATINGS (Flange Temperature = 25°C) Rating DC Supply Voltage RF Input Power RF Output Power Storage Temperature Operating Case Temperature Symbol Vbias, VS2, VS3 Pin Pout TC Tstg Value 5.0 15.6 200 15 - 30 to +100 - 30 to +100 Unit Volt m W Watt °C °C ELECTRICAL CHARACTERISTICS (VS2 = VS3 = 12.5 Vdc, Vbias = 4.8 Vdc, TC = 25°C, 50 Ω system, unless otherwise noted) Characteristic Frequency Range Efficiency (Pout = 14 W) (1) Power Gain (Pout = 14 W) (1) Harmonic Output (Pout = 14 W Reference) (1) Input VSWR (Pout = 14 W) (1) Linearity - % AM in Output Pout = 0.02 to 14 W; 135 k Hz, 1.0% AM on Input (1) Output Power at Decreased Voltage (Pin = 100 m W, VS2 = VS3 = 10.8 Vdc) (1) (1) Adjust Pin for specified Pout. Symbol BW η Gp 2fo 3fo VSWRin - Pout 10 - (continued) Min 880 35 21.5 - - - Max 915 - - - 30 - 35 3:1 6.0 % Watt Unit MHz % d B d Bc REV 3 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MHW913 1 ELECTRICAL CHARACTERISTICS (continued) (VS2 = VS3 = 12.5 V, Vbias = 4.8 V, TC = 25°C, 50 Ω system, unless otherwise noted) Load Mismatch Stress (Vsupply = 15.6 Vdc, Pout = 15 W; Load VSWR = 10:1, All Phase Angles) (1) Stability (Vsupply = 10.8 to 16 Vdc; Pout = 0.03 to 14 W; Load VSWR = 6:1, All Phase...