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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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UHF Silicon FET Power Amplifier
Designed specifically for the Pan European digital 8.0 watt, GSM mobile radio. The MHW913 is capable of wide power range control, operates from a 12.5 volt supply and requires less than 100 mW of RF input power. • Specified 12.5 V Characteristics RF Input Power ≤ 100 mW (20 dBm) RF Output Power = 14 W Minimum Gain = 21.5 dB Minimum Efficiency = 35% • 50 Ω Input/Output Impedance • Guaranteed Stability and Ruggedness • Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MHW913 Datasheet
