MJE1123 Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE1123/D Bipolar Power PNP Low Dropout Regulator Transistor The MJE1123 is an applications specific device designed to provide low dropout linear regulation for switching regulator post regulators, battery powered systems and other applications. The MJE1123 is fully specified in the saturation region and exhibits the following main.
MJE1123 Key Features
- High Gain Limits Base-Drive Losses to only 1-2% of Circuit Output Current
- Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts
- Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp MAXIMUM RATINGS (TC = 25°C Unless Otherwise No
- Continuous Collector Current
- Peak Base Current
- 65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C
- Junction to Case° Thermal Resistance
- Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%. VCE(sat)
- 100 250 40 7.0 65 11
- Vdc Vdc µAdc Symbol Min Typ Max Unit
MJE1123 Applications
- High Gain Limits Base-Drive Losses to only 1-2% of Circuit Output Current