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MJE13007 - POWER TRANSISTOR

Key Features

  • the base to emitter junction is reverse biased (VCEV), this is the recommended and specified use condition. Maximum ICEV at rated VCEV is specified at a relatively low reverse bias (1.5 Volts) both at 25°C and 100 °C. Increasing the reverse bias will give some improvement in device blocking capability. The sustaining or active region voltage requirements in switching.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MJE13002 1.5 AMPERE NPN SILICON POWER TRANSISTORS
MJE13003 1.5 AMPERE NPN SILICON POWER TRANSISTORS
MJE13005 4 AMPERE NPN SILICON POWER TRANSISTOR
MJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR
MJE1320 POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13007/D Designer's Data Sheet SWITCHMODE™ MJE13007 MJF13007 POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.