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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE700/D
PNP
Plastic Darlington Complementary Silicon Power Transistors
. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series T0220AB, MJE700T and MJE800T MAXIMUM RATINGS
MJE700,T MJE702 MJE703
NPN
MJE800,T MJE802 MJE803
4.
MJE800T Datasheet
