MLD1N06CL Overview
Key Features
- The internal Gate–Source and Gate–Drain clamps allow the device to be applied without use of external transient suppression components
- The Gate–Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV
- The Gate–Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads
- Their unique design provides voltage clamping that is essentially independent of operating temperature
- This approach offers an economical means of providing protection to power MOSFETs from harsh automotive and industrial environments
- SMARTDISCRETES™ devices are specified over a wide temperature range from –50°C to 150°C
- Rating Drain–to–Source Voltage Drain–to–Gate V
