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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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SMARTDISCRETES ™ Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal gate–to–source and gate–to–drain clamps allow the devices to be applied without use of external transient suppression components. The gate–to– source clamp protects the MOSFET input from electrostatic gate voltage stresses up to 2.0 kV.
MLP1N06 Datasheet
