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MM3009 - TRANSISTOR

Download the MM3009 datasheet PDF. This datasheet also covers the MM3008 variant, as both devices belong to the same transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MM3008-Motorola.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MM3008 MM3009 CASE 79-02, STYLE 1 TO-39 (TO-205AD) TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T^ = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction UjJ Temperature Range Symbol vCEO vEBO 'C PD Pd TJ- Tstg MM3008 MM3009 120 180 6.0 400 1.0 5.71 4.0 22.8 -65 to +200 Unit Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltaged) dC = 10 mAdc, Bl = 0) Emitter-Base Breakdown Voltage (IE = 10 ^Adc, cl = 0) Collector Cutoff Current WCB = 120 Vdc, El = 0) (VCB = 1 30 Vdc, El = 0) Emitter Cutoff Current (VBE = 4.