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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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JFET Ċ General Purpose Transistor
N–Channel
2 SOURCE 3 GATE
MMBF5457LT1
3
1 DRAIN
1 2
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage Reverse Gate–Source Voltage Gate Current Symbol VDS VDG VGS(r) IG Value 25 25 25 10 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
MMBF5457LT1 Datasheet
