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MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
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JFET General Purpose Transistor
P–Channel
3 GATE 2 SOURCE
MMBF5460LT1
1 DRAIN
3 1 2
MAXIMUM RATINGS
Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Symbol VDG VGSR IGF Value 40 40 10 Unit Vdc Vdc mAdc CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
MMBF5460LT1 Datasheet
