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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBF5484LT1/D
JFET Transistor
N–Channel
2 SOURCE 3 GATE
MMBF5484LT1
Motorola Preferred Device
1 DRAIN
MAXIMUM RATINGS
Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.8 Tstg – 65 to +150 mW mW/°C °C Value 25 25 10 Unit Vdc Vdc mAdc
1 2
3
CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
MMBF5484LT1 Datasheet
