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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBFJ177LT1/D
JFET Chopper
P–Channel — Depletion
3 GATE
2 SOURCE
MMBFJ177LT1
1 DRAIN
3 1
MAXIMUM RATINGS
Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol VDG VGS(r) Value 25 – 25 Unit Vdc Vdc
2
CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C
DEVICE MARKING
MMBFJ177LT1 = 6Y
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (VDS = 0, ID = 1.
MMBFJ177LT1 Datasheet
