Datasheet Summary
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
- Collector Current Continuous
Symbol vCEO vCBO v EBO
'C
THERMAL CHARACTERISTICS
Characteristic
- Total Device Dissipation, Ta = 25°C Derate above 25°C
Symbol PD
Storage Temperature
Tstq
- Thermal Resistance Junction to Ambient
Rsja
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage dC = 3.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage dC = 1.0 jitAdc, Ie = 0)
Emitter-Base...