Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR4957LT1/D
The RF Line
PNP Silicon High-Frequency Transistor
. . . designed for high- gain, low- noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin- film circuits using surface mount ponents.
- High Gain
- Gpe = 17 dB Typ @ f = 450 MHz
- Low Noise
- NF = 3.0 dB Typ @ f = 450 MHz
- Available in tape and reel packaging options by adding suffix: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Maximum Junction Temperature Power Dissipation, Tcase...