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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR5031LT1/D
The RF Line
NPN Silicon High-Frequency Transistor
Designed for thick and thin–film circuits using surface mount components and requiring low–noise, high–gain signal amplification at frequencies to 1.0 GHz. • High Gain — Gpe = 17 dB Typ @ f = 450 MHz • Low Noise — NF = 2.5 dB Typ @ f = 450 MHz • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C (1) Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(max) Value 10 15 3.0 20 150 0.300 4.
MMBR5031LT1 Datasheet
