MMBR5031LT1
MMBR5031LT1 is manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR5031LT1/D
The RF Line
NPN Silicon High-Frequency Transistor
Designed for thick and thin- film circuits using surface mount ponents and requiring low- noise, high- gain signal amplification at frequencies to 1.0 GHz.
- High Gain
- Gpe = 17 dB Typ @ f = 450 MHz
- Low Noise
- NF = 2.5 dB Typ @ f = 450 MHz
- Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C (1) Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO...
