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MMBR571LT1 - NPN Silicon High-Frequency Transistors

Key Features

  • >.
  • 151.
  • 163 VCE (Volts) 5.0 IC (mA) 5.0 f (MHz) 200 500 1000 1500 2000 200 500 1000 1500 2000 200 500 1000 1500 2000 200 500 1000 1500 2000 15 30 50 Table 1. MMBR571LT1 Common Emitter S.
  • Parameters MMBR571LT1 MRF571 MRF5711LT1 6.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR571LT1/D The RF Line NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost. • High Gain–Bandwidth Product fT = 8.0 GHz (Typ) @ 50 mA • Low Noise Figure NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571) • High Gain GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1) • High Power Gain Gpe (matched) = 13.