Click to expand full text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR901LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.
• High Current–Gain — Bandwidth Product
• Low Noise Figure @ f = 1.0 GHz — NF(matched) = 1.8 dB (Typ) (MRF9011LT1) NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3)
• High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) Gpe(matched) = 12.0 dB (Typ) @ f = 1.
MMBR901LT1 Datasheet
