MMBR911
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR911LT1/D
The RF Line
NPN Silicon High-Frequency Transistor
Designed for low noise, wide dynamic range front- end amplifiers and low- noise VCO’s. Available in a surface- mountable plastic package. This Motorola small- signal plastic transistor offers superior quality and performance at low cost.
- High Gain- Bandwidth Product f T = 7.0 GHz (Typ) @ 30 m A
- Low Noise Figure NF = 1.7 d B (Typ) @ 500 MHz
- High Gain GNF = 17 d B (Typ) @ 10 m A/500 MHz
- State- of- the- Art Technology Fine Line Geometry Ion- Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation
- Available in tape and reel packaging options: T1 suffix = 3,000 units per reel
MMBR911LT1
IC = 60 m A LOW NOISE HIGH- FREQUENCY TRANSISTOR NPN SILICON
CASE 318- 08, STYLE 6 SOT- 23 LOW PROFILE
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Power Dissipation @ Tcase =...
