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MMBT3416LT3 - General Purpose Amplifier

Key Features

  • a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT.
  • 23 SOT.
  • 23 POWER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3416LT3/D General Purpose Amplifier NPN Silicon COLLECTOR 3 1 BASE MMBT3416LT3 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) MAXIMUM RATINGS Rating Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value 40 4.0 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.