MMBT3416LT3 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3416LT3/D General Purpose Amplifier NPN Silicon COLLECTOR 3 1 BASE 3 1 2 EMITTER CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) MAXIMUM RATINGS Rating Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VEBO IC Value 40 4.0 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD...