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MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current
—Collector Current Continuous
Symbol VCEO VCBO VEBO
IB
c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation, T"a = 25°C Derate above 25°C
PD
Storage Temperature
Tstg
Thermal Resistance Junction to Ambient
RflJA
'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 350 350
5.0
250 500
Max
350 2.8 150 357
Unit Vdc Vdc Vdc
mA mA
Unit
mW
mW/°C
°C "C/W
MMBT6517
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
HIGH VOLTAGE TRANSISTOR
NPN SILICON
Refer to 2N6517 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 1.
MMBT6517 Datasheet
