MMBT6520
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
HIGH VOLTAGE TRANSISTOR
PNP SILICON
Refer to 2N6520 for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current
—Collector Current Continuous
Symbol v CEO v CBO Vebo
IB
'C
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Total Device Dissipation, T^ = 25°C Derate above 25°C
PD
Storage Temperature
T stq
•Thermal Resistance Junction to Ambient
R 0JA
'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
MMBT6520 Datasheet
