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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA13LT1/D
Darlington Amplifier Transistors
NPN Silicon
COLLECTOR 3 BASE 1
MMBTA13LT1 MMBTA14LT1*
*Motorola Preferred Device
EMITTER 2
3 1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc mAdc
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.
MMBTA13LT1 Datasheet
