MMBTA64 Datasheet PDF

MAXIMUM RATINGS

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol V CES vCBO v EBO c THERMAL CHARACTERISTICS Characteristic Symbol
●Total Device Dissipation, Ta = 25°C Derate above 25°C PD Storage Temperature Tstq
●Thermal Resistance Junction to Ambient R&JA
●Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 30 30 10 500 Max 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW mW/X °C °c/w MMBTA63 MMBTA64 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) DARLINGTON TRANSISTOR PNP SILICON Refer to MPSA75 for graphs.

ELECTRICAL CHARACTERISTICS

(Ta = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 100 /iAdc) Collector Cutoff Current (VCB = 30 Vdc > Emitter Cutoff Current (V B E = 10 Vdc) ON CHARACTERISTICS DC Current GainO) c(l = 10 mAdc, Vqe = 5.0 Vdc) c(l = 10 mAdc, Vce = 5.0 Vdc) c(l = 100 mAdc, VC e = 5.0 Vdc) c(l = 1000 mAdc, Vqe = 5.0 V