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MMBTH10LT1 - VHF/UHF Transistor

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTH10LT1/D VHF/UHF Transistor MMBTH10LT1 COLLECTOR 3 1 BASE 3 Motorola Preferred Device NPN Silicon 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc DEVICE MARKING MMBTH10LT1 = 3EM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.