MMBV109
MMBV109 is VOLTAGE VARIABLE CAPACITANCE DIODE manufactured by Motorola Semiconductor.
CASE 318-02/03, STYLE 8
SOT-23 (TO-236AA/AB)
VOLTAGE VARIABLE CAPACITANCE DIODE
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current
Symbol VR if
THERMAL CHARACTERISTICS
Characteristic
Symbol
- Total Device Dissipation, T/ = 25°C Derate above 25°C
Storage Temperature
Tstq
- Thermal Resistance Junction to Ambient
R 0JA
- Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 30 200
Max
350 2.8 150 357
Unit Vdc mAdc
Unit mW mW/°C
°C °C/W
ELECTRICAL CHARACTERISTICS 0a = 25°C unless otherwise noted]
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (Ir = 10 /uAdc)
Reverse Voltage Leakage Current (Vr = 28 Vdc)
Series Inductance (f...
