| Part number | MMBV109 |
|---|---|
| Datasheet | MMBV109-Motorola.pdf |
| File Size | 25.08 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | VOLTAGE VARIABLE CAPACITANCE DIODE |
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MMBV109 CASE 318-02/03, STYLE 8 SOT-23 (TO-236AA/AB) VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Rating Reverse Voltage Forward Current Symbol VR if THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, T/ = 25°C Derate above 25°C PD.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MMBV109LT1 | Silicon Epicap Diode | Leshan Radio Company |
 |
MMBV109LT1 | Silicon Epicap Diodes | ON Semiconductor |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MMBV109LT1 | Silicon Epicap Diodes |
| MMBV105G | VOLTAGE VARIABLE CAPACITANCE DIODE |
| MMBV105GLT1 | Silicon Tuning Diode |
| MMBV2101LT1 | Silicon Tuning Diode |
| MMBV2103LT1 | Silicon Tuning Diode |
| MMBV2105LT1 | Silicon Tuning Diode |
| MMBV2107LT1 | Silicon Tuning Diode |
| MMBV2108LT1 | Silicon Tuning Diode |
| MMBV2109LT1 | Silicon Tuning Diode |
| MMBV3102LT1 | Silicon Tuning Diode |
