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MMCF28S7 - FLIP-CHIP NPN RF SMALL-SIGNAL TRANSISTORS

Download the MMCF28S7 datasheet PDF. This datasheet also covers the MMCFS179 variant, as both devices belong to the same flip-chip npn rf small-signal transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MMCFS179-Motorola.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMCFS179 (SILICON) MMCF28S7 Flip-Chip - NPN RF small-signal transistors designed for use in amplifier, oscillator and mixer applications. • High Current-Gain Bandwidth Product • Low Input Capacitance FLIP-CHIP NPN RF SMALL-SIGNAL TRANSISTORS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltllge Emitter-Blise Voltllge Collector Current - Continuous Symbol VCEO VCB VEB IC Value 15 30 25 50 Unit Vdc Vdc Vdc mAdc ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (lc = 3.0 mAde, IB = 0) MMCF5179 MMCF2857 Collector-Base Breakdown Voltage (lC = 1.0 J..LAdc, IE = 0) MMCF5179 MMCF2857 Emitter-Base ~reakdown Voltage (IE = 10 J..LAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (lc = 3.