Datasheet4U Logo Datasheet4U.com

MMCF4339 - FLIP-CHIP N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS

Download the MMCF4339 datasheet PDF. This datasheet also covers the MMCF4338 variant, as both devices belong to the same flip-chip n-channel junction field effect transistors family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMCF4338-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MMC0310 (MM Series) Cylindrical General Purpose Surface Mount Power Resistor IRC
MMC124A Angle module / instantaneous acceleration MiraMEMS
MMC127A Angle module / instantaneous acceleration MiraMEMS
MMC2001 M-CORE Reference Manual Freescale Semiconductor
MMC2112 M CORE Microcontrollers Motorola Inc

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MMCF4338 FLIP-CHIP N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS
MMCF4223 FLIP-CHIP N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS
MMCF4224 FLIP-CHIP N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS
MMCF2221 FLIP-CHIP NPN SWITCH AND AMPLIFIER TRANSISTORS
MMCF2221A FLIP-CHIP NPN SWITCH AND AMPLIFIER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MMCF4338 (SILICON) MMCF4339 Flip-Chip - N-channel junction field effect transistor designed for low~level transistor designed for low-level audio and general purpose applications. • Drain and Source Interchangeable • Excellent Performance as High-Impedance Input • Low Pinch-Off Voltage Permits Use in Battery Driven Applications. FLIP-CHIP N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS • MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Operating Junction Temperature Symbol VDS VDG VGS ID TJ Value 50 50 50 50 +175 Unit Vdc Vdc Vdc mAdc °c 4-25 MMC4338, MMCF4339 (continued) • ELECTRICAL CHARACTERISTICS Characteristic Symbol Mir:t Gate-Source Breakdown Voltage (lG = 10 p.
Published: |