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MMCF930 - FLIP-CHIP NPN SMALL-SIGNAL AMPLIFIER TRANSISTORS

Download the MMCF930 datasheet PDF. This datasheet also covers the MMCF929 variant, as both devices belong to the same flip-chip npn small-signal amplifier transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • High DC Current Gain @ IC = 1.0 mAdc, VCE = 5.0 Vdc - hFE = 200 (Min) - MMCF2484 = 60 (Min) - MMCF929.
  • Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.25 Vdc (Max) @ IC = 1.0 mAdc FLIP-CHIP NPN SMALL-SIGNAL.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMCF929-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MMCF929, MMCF930 (SILICON) MMCF2484 Flip-Chip - NPN silicon Annular transistor family for low-level amplifier applications similar to the 2N929, 2N930 and 2N2484. Primary Electrical Features: • High DC Current Gain @ IC = 1.0 mAdc, VCE = 5.0 Vdc - hFE = 200 (Min) - MMCF2484 = 60 (Min) - MMCF929 • Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.25 Vdc (Max) @ IC = 1.0 mAdc FLIP-CHIP NPN SMALL-SIGNAL AMPLIFIER TRANSISTORS • MAXIMUM RATINGS , Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCB VEB IC MMCF929 MMCF930 MMCF2484 45 60 45 60 5.
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