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MMDF1N05E - DUAL MOSFET

Key Features

  • printed circuit board to achieve a power dissipation of 2.0 Watts using the footprint shown. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using board material such as Thermal Clad, the power dissipation can be doubled using the same footprint.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF1N05E/D Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors MMDF1N05E DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.