MMDF3N03HD - Dual MOSFET

Features

. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG.
VGSP)] td(off) = RG Ciss In (VGG/VGSP) The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off.
state condition when calculating td(on) and is read at a voltage corresponding to the on.
state when calculating td(off). At high switching speeds, para.

Motorola

Datasheet Details

Part number	MMDF3N03HD
Manufacturer	Motorola
File Size	281.68 KB
Description	Dual MOSFET
Datasheet	MMDF3N03HD Datasheet
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF3N03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF3N03HD Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Published: May 9, 2005 |