MMDF3N04HD - Dual MOSFET

Features

of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the drivin.

Motorola

Datasheet Details

Part number	MMDF3N04HD
Manufacturer	Motorola
File Size	291.15 KB
Description	Dual MOSFET
Datasheet	MMDF3N04HD Datasheet
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF3N04HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF3N04HD Motorola Preferred Device MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Published: May 9, 2005 |