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MMDJ3N03BJT - DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDJ3N03BJT/D Preliminary Data Sheet Plastic Power Transistors SO–8 for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 100 Vdc (Min) @ IC = 1.0 Adc = 90 Vdc (Min) @ IC = 3.0 Adc • Low Collector –Emitter Saturation Voltage — VCE(sat) = 0.235 Vdc (Max) @ IC = 1.2 Adc = 0.5 Vdc (Max) @ IC = 5.