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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMDJ3P03BJT/D
Preliminary Data Sheet
• High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc
Plastic Power Transistors
SO–8 for Surface Mount Applications
• Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
MMDJ3P03BJT
Motorola Preferred Device
DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES
• Low Collector –Emitter Saturation Voltage — VCE(sat) = 0.24 Vdc (Max) @ IC = 1.2 Adc = 0.60 Vdc (Max) @ IC = 5.
MMDJ3P03BJT Datasheet
