MMFT2N02EL Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2N02EL/D Medium Power Field Effect Transistor N- Channel Enhancement Mode Silicon Gate TMOS E- FETt SOT- 223 for Surface Mount This advanced E- FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and mutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc- dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where...