MMFT2N02EL - MEDIUM POWER MOSFET

Motorola Semiconductor (now NXP Semiconductors)

Key Features

RATED VDSS VdsL = Vf + Li ⋅ dlS/dt VDS, DRAIN.
TO.
SOURCE.

MMFT2N02EL medium power mosfet by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MMFT2N02EL
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	250.77 KB
Description	MEDIUM POWER MOSFET
Datasheet	MMFT2N02EL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2N02EL/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.